Influence of growth kinetics on graphene domains shape under atmospheric pressure chemical vapor deposition
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چکیده
منابع مشابه
Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.
The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edges of graphene, which are the sites at which carbon accumulates in the two-dimensional honeycomb l...
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Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene-boron nitride interface were restricted to the microscopy of nanodomains. Here we report templated growth of single cryst...
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Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with...
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ژورنال
عنوان ژورنال: Graphene Technology
سال: 2020
ISSN: 2365-6301,2365-631X
DOI: 10.1007/s41127-020-00035-z